검색결과 : 31건
| No. | Article |
|---|---|
| 1 |
Femtosecond-laser-induced modifications of Ge2Sb2Te5 thin films: Permanent optical change without amorphization Moller SH, Eriksen EH, Tonning PL, Jensen PB, Chevallier J, Balling P Applied Surface Science, 476, 221, 2019 |
| 2 |
Direct evidence of reactive ion etching induced damages in Ge2Sb2Te5 based on different halogen plasmas Li JT, Xia YY, Liu B, Feng GM, Song ZT, Gao D, Xu Z, Wang WW, Chan YP, Feng SL Applied Surface Science, 378, 163, 2016 |
| 3 |
The improvement of nitrogen doped Ge2Sb2Te5 on the phase change memory resistance distributions Xu Z, Liu B, Chen YF, Zhang ZH, Gao D, Wang H, Song ZT, Wang CZ, Ren JD, Zhu NF, Xiang YH, Zhan YP, Feng SL Solid-State Electronics, 116, 119, 2016 |
| 4 |
Epitaxial Ge2Sb2Te5 films on Si(111) prepared by pulsed laser deposition Hilmi I, Thelander E, Schumacher P, Gerlach JW, Rauschenbach B Thin Solid Films, 619, 81, 2016 |
| 5 |
Morphology and crystalline phase characteristics of alpha-GST films irradiated by a picosecond laser Zhao JJ, Liu FR, Han XX, Bai N, Wan YH, Lin X, Liu F Applied Surface Science, 289, 160, 2014 |
| 6 |
Effects of carbon doping on chemical states of amorphous Ge2Sb2Te5, measured with synchrotron radiation Jung MC, Lee YM, Kim K Current Applied Physics, 14(11), 1421, 2014 |
| 7 |
Endpoint detection of Ge2Sb2Te5 during chemical mechanical planarization He AD, Liu B, Song ZT, Liu WL, Lu YG, Wang LY, Wu GP, Feng SL Applied Surface Science, 283, 304, 2013 |
| 8 |
Crystallization of amorphous Ge2Sb2Te5 films induced by an ultraviolet laser Zhou WP, Liu FR, Bai N, Wan YH, Lin X, Chen JM Applied Surface Science, 285, 97, 2013 |
| 9 |
Investigation on nitrogen-doped Ge2Sb2Te5 material for phase-change memory application Yao DN, Zhou XL, Wu LC, Song ZT, Cheng LM, Rao F, Liu B, Feng SL Solid-State Electronics, 79, 138, 2013 |
| 10 |
Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate Deleruyelle D, Putero M, Ouled-Khachroum T, Bocquet M, Coulet MV, Boddaert X, Calmes C, Muller C Solid-State Electronics, 79, 159, 2013 |