| 1 |
The improvement of nitrogen doped Ge2Sb2Te5 on the phase change memory resistance distributions
Xu Z, Liu B, Chen YF, Zhang ZH, Gao D, Wang H, Song ZT, Wang CZ, Ren JD, Zhu NF, Xiang YH, Zhan YP, Feng SL
Solid-State Electronics, 116, 119, 2016 |
| 2 |
Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate
Deleruyelle D, Putero M, Ouled-Khachroum T, Bocquet M, Coulet MV, Boddaert X, Calmes C, Muller C
Solid-State Electronics, 79, 159, 2013 |
| 3 |
Spectroscopic investigation on phase transitions for Ge2Sb2Te5 in a wide photon energy and high temperature region
Seo YK, Chung JS, Lee YS, Choi EJ, Cheong B
Thin Solid Films, 520(9), 3458, 2012 |
| 4 |
Improvement of operational stability in SET states of phase-change-type nonvolatile memory devices using Sb-rich phase of Ge-Sb-Te alloys
Yoon SM, Lee SY, Jung SW, Park YS, Yu BG
Solid-State Electronics, 53(5), 557, 2009 |
| 5 |
Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films
Yoon SM, Choi KJ, Lee NY, Lee SY, Park YS, Yu BG
Applied Surface Science, 254(1), 316, 2007 |
