화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 The studies of Ge quantum dots on strained Si0.7Ge0.3 layer by photoluminescence and deep level transient spectroscopy
Tao ZS, Zhan N, Yang HB, Ling Y, Zhong ZY, Lu F
Applied Surface Science, 255(6), 3548, 2009
2 Germanium-based nanophotonic devices: Two-dimensional photonic crystals and cavities
Boucaud P, El Kurdi M, David S, Checoury X, Li X, Ngo TP, Sauvage S, Bouchier D, Fishman G, Kermarrec O, Campidelli Y, Bensahel D, Akatsu T, Richtarch C, Ghyselen B
Thin Solid Films, 517(1), 121, 2008
3 High-lifetime GaAs on Si using GeSi buffers and its potential for space photovoltaics
Carlin JA, Ringel SA, Fitzgerald A, Bulsara M
Solar Energy Materials and Solar Cells, 66(1-4), 621, 2001
4 Solid solutions GeSi grown by MBE on a low temperature Si(001) buffer layer: specific features of plastic relaxation
Bolkhovityanov YB, Gutakovskii AK, Mashanov VI, Pchelyakov OP, Revenko MA, Sokolov LV
Thin Solid Films, 392(1), 98, 2001
5 In situ RHEED control of self-organized Ge quantum dots
Nikiforov AI, Cherepanov VA, Pchelyakov OP, Dvurechenskii AV, Yakimov AI
Thin Solid Films, 380(1-2), 158, 2000
6 XPS and TOFSIMS studies of shallow Si/Si1-xGex/Si layers
Conard T, De Witte H, Loo R, Verheyen P, Vandervorst W, Caymax M, Gijbels R
Thin Solid Films, 343-344, 583, 1999
7 Roughness of thermal oxide layers grown on ion implanted silicon wafers
Iacona F, Raineri V, La Via F, Rimini E
Journal of Vacuum Science & Technology B, 16(2), 619, 1998