검색결과 : 21건
| No. | Article |
|---|---|
| 1 |
Analysis of Raman scattering from inclined GeSn/Ge dual-nanowire heterostructure on Ge(111) substrate Han DL, Ye H, Song YX, Zhu ZYS, Yang YK, Yu ZY, Liu YM, Wang SM, Di ZF Applied Surface Science, 463, 581, 2019 |
| 2 |
Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H-2 and N-2 carrier gas Margetis J, Mosleh A, Al-Kabi S, Ghetmiri SA, Du W, Dou W, Benamara M, Li B, Mortazavi M, Naseem HA, Yu SQ, Tolle J Journal of Crystal Growth, 463, 128, 2017 |
| 3 |
Process modules for GeSn nanoelectronics with high Sn-contents Schulte-Braucks C, Glass S, Hofmann E, Stange D, von den Driesch N, Hartmann JM, Ikonic Z, Zhao QT, Buca D, Mantl S Solid-State Electronics, 128, 54, 2017 |
| 4 |
Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy Jo HJ, Kim GH, Kim JS, Ryu MY, Yeo YK, Harris TR, Kouvetakis J Current Applied Physics, 16(1), 83, 2016 |
| 5 |
Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors Schulze J, Blech A, Datta A, Fischer IA, Hahnel D, Naasz S, Rolseth E, Tropper EM Solid-State Electronics, 110, 59, 2015 |
| 6 |
Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes Baert B, Gupta S, Gencarelli F, Loo R, Simoen E, Nguyen ND Solid-State Electronics, 110, 65, 2015 |
| 7 |
Absorption coefficients of GeSn extracted from PIN photodetector response Ye K, Zhang W, Oehme M, Schmid M, Gollhofer M, Kostecki K, Widmann D, Korner R, Kasper E, Schulze J Solid-State Electronics, 110, 71, 2015 |
| 8 |
Study of the energy distribution of the interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics Baert B, Schmeits M, Nguyen ND Applied Surface Science, 291, 25, 2014 |
| 9 |
Electrical properties of magnesium oxide layers with different surface pretreatment on high mobility Ge1-xSnx and Ge MOS capacitors Su CY, Lieten R, Bakalov P, Tseng WJ, Dillemans L, Menghini M, Smets T, Seo JW, Locquet JP Applied Surface Science, 291, 31, 2014 |
| 10 |
Formation and characterization of locally strained Ge-1 (-) Sn-x(x)/Ge microstructures Ike S, Moriyama Y, Kurosawa M, Taoka N, Nakatsuka O, Imai Y, Kimura S, Tezuka T, Zaima S Thin Solid Films, 557, 164, 2014 |