검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Oxidation-induced crystallographic transformation in heavily N-doped 4H-SiC wafers Skromme BJ, Palle K, Poweleit CD, Bryant LR, Vetter WM, Dudley M, Moore K, Gehoski T Materials Science Forum, 389-3, 455, 2002 |
| 2 |
Fermi level pinning and Schottky barrier characteristics on reactively ion etched 4H-SiC Skromme BJ, Luckowski E, Moore K, Clemens S, Resnick D, Gehoski T, Ganser D Materials Science Forum, 338-3, 1029, 2000 |