| 1 |
Simulation study of a novel 3D SPAD pixel in an advanced FD-SOI technology
Vignetti MM, Calmon F, Lesieur P, Savoy-Navarro A
Solid-State Electronics, 128, 163, 2017 |
| 2 |
Comprehensive understanding of dark count mechanisms of single-photon avalanche diodes fabricated in deep sub-micron CMOS technologies
Xu YX, Xiang P, Xie XP
Solid-State Electronics, 129, 168, 2017 |
| 3 |
The effect of temporal separation of two Geiger mode avalanche photodiodes and variation of time bin widths on detection probabilities in LADAR system using two Geiger mode avalanche photodiodes
Kim TH, Kong HJ, Jo SE, Oh MS
Current Applied Physics, 13(9), 1975, 2013 |
| 4 |
A single electron bipolar avalanche transistor implemented in 90 nm CMOS
Webster EAG, Richardson JA, Grant LA, Henderson RK
Solid-State Electronics, 76, 116, 2012 |
| 5 |
Systematic experiments for proof of Poisson statistics on direct-detection laser radar using Geiger mode avalanche photodiode
Oh MS, Kong HJ, Kim TH
Current Applied Physics, 10(4), 1041, 2010 |
| 6 |
A low-noise single-photon detector implemented in a 130 nm CMOS imaging process
Gersbach M, Richardson J, Mazaleyrat E, Hardillier S, Niclass C, Henderson R, Grant L, Charbon E
Solid-State Electronics, 53(7), 803, 2009 |
