검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC Ruppalt LB, Stafford S, Yuan D, Jones KA, Ervin MH, Kirchner KW, Zheleva TS, Wood MC, Geil BR, Forsythe E, Vispute RD, Venkatesan T Solid-State Electronics, 47(2), 253, 2003 |
| 2 |
AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques Bathe R, Vispute RD, Habersat D, Sharma RP, Venkatesan T, Scozzie CJ, Ervin M, Geil BR, Lelis AJ, Dikshit SJ, Bhattacharya R Thin Solid Films, 398-399, 575, 2001 |
| 3 |
Comparison of high-temperature electrical characterizations of pulsed-laser deposited AlN on 6H- and 4H-SiC from 25 to 450 degrees C Lelis AJ, Scozzie CJ, McLean FB, Geil BR, Vispute RD, Venkatesan T Materials Science Forum, 338-3, 1137, 2000 |
| 4 |
4H-SiC gate turn-off thyristor designs for very high power control Shah PB, Geil BR, Jones KA, Griffin TE, Derenge MA Materials Science Forum, 338-3, 1395, 2000 |