화학공학소재연구정보센터
검색결과 : 14건
No. Article
1 Growth of lattice-matched GaInAsP grown on vicinal GaAs(001) substrates within the miscibility gap for solar cells
Oshima R, France RM, Geisz JF, Norman AG, Steiner MA
Journal of Crystal Growth, 458, 1, 2017
2 Reduced dislocation density in GaxIn1-xP compositionally graded buffer layers through engineered glide plane switch
Schulte KL, France RM, McMahon WE, Norman AG, Guthrey HL, Geisz JF
Journal of Crystal Growth, 464, 20, 2017
3 Thin, high quality GaInP compositionally graded buffer layers grown at high growth rates for metamorphic III-V solar cell applications
Garcia I, France RM, Geisz JF, Simon J
Journal of Crystal Growth, 393, 64, 2014
4 In situ stress measurement for MOVPE growth of high efficiency lattice-mismatched solar cells
Geisz JF, Levander AX, Norman AG, Jones KM, Romero MJ
Journal of Crystal Growth, 310(7-9), 2339, 2008
5 Characterization of light element impurities in gallium-nitride-phosphide by SIMS analysis
Reedy RC, Geisz JF, Ptak AJ, Keyes BM, Metzger WK
Applied Surface Science, 231-2, 808, 2004
6 Unintentional carbon and hydrogen incorporation in GaNP grown by metal-organic chemical vapor deposition
Geisz JF, Reedy RC, Keyes BM, Metzger WK
Journal of Crystal Growth, 259(3), 223, 2003
7 Incorporation of nitrogen into GaAsN grown by MOCVD using different precursors
Kurtz S, Reedy R, Barber GD, Geisz JF, Friedman DJ, McMahon WE, Olson JM
Journal of Crystal Growth, 234(2-3), 318, 2002
8 Evaluation of NF3 versus dimethylhydrazine as N sources for GaAsN
Kurtz S, Reedy R, Keyes B, Barber GD, Geisz JF, Friedman DJ, McMahon WE, Olson JM
Journal of Crystal Growth, 234(2-3), 323, 2002
9 Mutual passivation of electrically active and isovalent impurities
Yu KM, Walukiewicz W, Wu J, Mars DE, Chamberlin DR, Scarpulla MA, Dubon OD, Geisz JF
Nature Materials, 1(3), 185, 2002
10 Epitaxial growth of BGaAs and BGaInAs by MOCVD
Geisz JF, Friedman DJ, Kurtz S, Olson JM, Swartzlander AB, Reedy RC, Norman AG
Journal of Crystal Growth, 225(2-4), 372, 2001