화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Thin film fully-depleted SOI four-gate transistors
Akarvardar K, Cristoloveanu S, Bawedin M, Gentil P, Blalock BJ, Flandre D
Solid-State Electronics, 51(2), 278, 2007
2 High quality Germanium-On-Insulator wafers with excellent hole mobility
Nguyen QT, Damlencourt JF, Vincent B, Clavelier L, Morand Y, Gentil P, Cristoloveanu S
Solid-State Electronics, 51(9), 1172, 2007
3 Adaptation of the pseudo-MOS transistor for the characterization of silicon-on-sapphire films
Hefyene N, Cristoloveanu S, Ghibaudo G, Gentil P, Moriyasu Y, Morishita T, Matsui M, Yasujima A
Solid-State Electronics, 44(10), 1711, 2000
4 Influence of Nitrogen or Argon Anneals on the Properties of Wafers and Devices Separated by Implantation of Oxygen
Cristoloveanu S, Ionescu A, Wetteroth T, Shin H, Munteanu D, Gentil P, Hong S, Wilson SR
Journal of the Electrochemical Society, 144(4), 1468, 1997