| 1 |
Strain-compensated AlAs/(In,Ga)As heterostructures for short-wavelength intersubband absorption and laser emission
Semtsiv MP, Ziegler M, Dressler S, Masselink WT, Georgiev N, Dekorsy T, Helm M
Journal of Crystal Growth, 278(1-4), 526, 2005 |
| 2 |
Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy
Mozume T, Georgiev N, Yoshida H
Journal of Crystal Growth, 227, 577, 2001 |
| 3 |
Optical properties of InGaAs/AlAsSb type I single quantum wells lattice matched to InP
Georgiev N, Mozume T
Journal of Vacuum Science & Technology B, 19(5), 1747, 2001 |
| 4 |
Raman scattering analysis of InGaAs/AlAsSb short-period superlattices
Georgiev N, Mozume T
Applied Surface Science, 159, 520, 2000 |
| 5 |
Effect of group-V species exchange at the interfaces of InGaAs/AlAsSb superlattice
Georgiev N, Mozume T
Journal of Crystal Growth, 209(2-3), 247, 2000 |
| 6 |
Photoluminescence characterization of type IIInGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy
Mozume T, Georgiev N, Nishimura T, Yoshida H, Nishikawa S, Neogi A
Journal of Crystal Growth, 209(2-3), 445, 2000 |
| 7 |
Observation of direct (type-I) transitions in type-II InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy
Mozume T, Georgiev N, Yoshida H, Neogi A, Nishimura T
Journal of Vacuum Science & Technology B, 18(3), 1586, 2000 |
| 8 |
Interface control of InGaAs/AlAsSb heterostructures
Mozume T, Georgiev N
Thin Solid Films, 380(1-2), 249, 2000 |
