화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP
Maier M, Serries D, Geppert T, Kohler K, Gullich H, Herres N
Applied Surface Science, 203, 486, 2003
2 Bonding of nitrogen in dilute GaInAsN and AlGaAsN studied by Raman spectroscopy
Wagner J, Geppert T, Kohler K, Ganser P, Maier M
Solid-State Electronics, 47(3), 461, 2003
3 New Principle for the Determination of Coupling-Constants That Largely Suppresses Differential Relaxation Effects
Rexroth A, Schmidt P, Szalma S, Geppert T, Schwalbe H, Griesinger C
Journal of the American Chemical Society, 117(41), 10389, 1995