검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy Richter M, Rossel C, Webb DJ, Topuria T, Gerl C, Sousa M, Marchiori C, Caimi D, Siegwart H, Rice PM, Fompeyrine J Journal of Crystal Growth, 323(1), 387, 2011 |
| 2 |
Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs Hopstaken MJP, Gordon MS, Pfeiffer D, Sadana DK, Topuria T, Rice PM, Gerl C, Richter M, Marchiori C Journal of Vacuum Science & Technology B, 28(6), 1287, 2010 |
| 3 |
Growth and subband structure determination of high mobility hole gases on (001) and (110) GaAs Gerl C, Bauer J, Wegseheider W Journal of Crystal Growth, 301, 145, 2007 |
| 4 |
Carbon-doped high-mobility hole gases on (001) and (110) GaAs Gerl C, Schmult S, Wurstbauer U, Tranitz HP, Mitzkus C, Wegscheider W Journal of Vacuum Science & Technology B, 24(3), 1630, 2006 |