| 1 |
Homoepitaxy of Ge on ozone-treated Ge (100) substrate by ultra-high vacuum chemical vapor deposition
Wang JQ, Shen LM, Lin GY, Wang JY, Xu JF, Chen SY, Xiang G, Li C
Journal of Crystal Growth, 507, 113, 2019 |
| 2 |
Reduction of threading dislocation density in SiGe epilayer on Si (001) by lateral growth liquid-phase epitaxy
O'Reilly AJ, Quitoriano NJ
Journal of Crystal Growth, 483, 223, 2018 |
| 3 |
Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses
O'Reilly AJ, Quitoriano N
Journal of Crystal Growth, 482, 15, 2018 |
| 4 |
Assessment of the growth/etch back technique for the production of Ge strain-relaxed buffers on Si
Hartmann JM, Aubin J
Journal of Crystal Growth, 488, 43, 2018 |
| 5 |
Role of 2 x 1 surface reconstruction on Stranski-Krastanov growth illustrated using a modified solid-on-solid model
Ghosh P, Ranganathan M
Journal of Crystal Growth, 457, 98, 2017 |
| 6 |
Surfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates
Schmidt J, Tetzlaff D, Bugiel E, Wietler TF
Journal of Crystal Growth, 457, 171, 2017 |
| 7 |
Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100)
Nikiforov AI, Timofeev VA, Tuktamyshev AR, Yakimov AI, Mashanov VI, Gutakovskii AK
Journal of Crystal Growth, 457, 215, 2017 |
| 8 |
Graphene-like monolayer low-buckled honeycomb germanium film
He YZ, Luo HB, Li H, Sui YW, Wei FX, Meng QK, Yang WM, Qi JQ
Journal of Crystal Growth, 463, 187, 2017 |
| 9 |
Sn - Induced decomposition of SiGeSn alloys grown on Si by molecular-beam epitaxy
Talochkin AB, Timofeev VA, Gutakovskii AK, Mashanov VI
Journal of Crystal Growth, 478, 205, 2017 |
| 10 |
Numerical study of liquid phase diffusion growth of SiGe subjected to accelerated crucible rotation
Sekhon M, Lent B, Dost S
Journal of Crystal Growth, 438, 90, 2016 |
