| 1 |
Superconducting single-atomic-layer Tl-Pb compounds on Ge(111) and Si (111) surfaces
Nakamura T, Takayama A, Hobara R, Gruznev DV, Zotov AV, Saranin AA, Hasegawa S
Applied Surface Science, 479, 679, 2019 |
| 2 |
Homoepitaxy of Ge on ozone-treated Ge (100) substrate by ultra-high vacuum chemical vapor deposition
Wang JQ, Shen LM, Lin GY, Wang JY, Xu JF, Chen SY, Xiang G, Li C
Journal of Crystal Growth, 507, 113, 2019 |
| 3 |
Comparison study of temperature dependent direct/indirect bandgap emissions of Ge1-x-ySixSny and Ge1-ySny grown on Ge buffered Si
Wang BG, Harris TR, Hogsed MR, Yeo YK, Ryu MY, Kouvetakis J
Thin Solid Films, 673, 63, 2019 |
| 4 |
Reduction of threading dislocation density in SiGe epilayer on Si (001) by lateral growth liquid-phase epitaxy
O'Reilly AJ, Quitoriano NJ
Journal of Crystal Growth, 483, 223, 2018 |
| 5 |
Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses
O'Reilly AJ, Quitoriano N
Journal of Crystal Growth, 482, 15, 2018 |
| 6 |
Assessment of the growth/etch back technique for the production of Ge strain-relaxed buffers on Si
Hartmann JM, Aubin J
Journal of Crystal Growth, 488, 43, 2018 |
| 7 |
Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition
Wang BG, Fang ZQ, Claflin B, Look D, Kouvetakis J, Yeo YK
Thin Solid Films, 654, 77, 2018 |
| 8 |
Role of 2 x 1 surface reconstruction on Stranski-Krastanov growth illustrated using a modified solid-on-solid model
Ghosh P, Ranganathan M
Journal of Crystal Growth, 457, 98, 2017 |
| 9 |
Surfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates
Schmidt J, Tetzlaff D, Bugiel E, Wietler TF
Journal of Crystal Growth, 457, 171, 2017 |
| 10 |
Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100)
Nikiforov AI, Timofeev VA, Tuktamyshev AR, Yakimov AI, Mashanov VI, Gutakovskii AK
Journal of Crystal Growth, 457, 215, 2017 |
