검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H-2 and N-2 carrier gas Margetis J, Mosleh A, Al-Kabi S, Ghetmiri SA, Du W, Dou W, Benamara M, Li B, Mortazavi M, Naseem HA, Yu SQ, Tolle J Journal of Crystal Growth, 463, 128, 2017 |
| 2 |
Electrical characterization studies of p-type Ge, Ge1-ySny, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates Harris TR, Ryu MY, Yeo YK, Beeler RT, Kouvetakis J Current Applied Physics, 14, S123, 2014 |
| 3 |
Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing Wang W, Su SJ, Zheng J, Zhang GZ, Xue CL, Zuo YH, Cheng BW, Wang QM Applied Surface Science, 257(9), 4468, 2011 |
| 4 |
Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates Su SJ, Wang W, Cheng BW, Zhang GZ, Hu WX, Xue CL, Zuo YH, Wang QM Journal of Crystal Growth, 317(1), 43, 2011 |