검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices Longo M, Parisini A, Tarricone L, Vantaggio S, Bocchi C, Germini F, Lazzarini L Journal of Crystal Growth, 311(18), 4293, 2009 |
| 2 |
Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs: A Study by the Chemically Sensitive (200) Diffraction Frigeri C, Attolini G, Bosi M, Pelosi C, Germini F Journal of the Electrochemical Society, 156(6), H448, 2009 |
| 3 |
Structural and electrical investigation of high temperature annealed As-implanted Si crystals Bocchi C, Felisari L, Catellani A, Cicero G, Germini F, Gombia E, Mosca R, Nasi L, Mukhamedzhanov EK, Chuev MA, Privitera V, Camalleri M, Cali D Journal of Vacuum Science & Technology B, 23(4), 1504, 2005 |
| 4 |
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources Begotti M, Longo M, Magnanini R, Parisini A, Tarricone L, Bocchi C, Germini F, Lazzarini L, Nasi L, Geddo M Applied Surface Science, 222(1-4), 423, 2004 |
| 5 |
Triple crystal diffractometry, x-ray standing wave, and transmission electron microscopy investigation of shallow BF2 implantation in Si Bocchi C, Germini F, Ghezzi G, Gombia E, Mosca R, Nasi L, Mukhamedzhanov EK, Privitera V, Spinella C Journal of Vacuum Science & Technology B, 20(4), 1436, 2002 |
| 6 |
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE Attolini G, Bocchi C, Germini F, Pelosi C, Parisini A, Tarricone L, Kudela R, Hasenohrl S Materials Chemistry and Physics, 66(2-3), 246, 2000 |