화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Enhancement in multicolor photoresponse for quaternary capped In0.5Ga0.5As/GaAs quantum dot infrared photodetectors implanted with hydrogen ions
Upadhyay S, Mandal A, Agarwal A, Ghadi H, Kumari KCG, Basu A, Subrahmanyam NBV, Singh P, Chakrabarti S
Materials Research Bulletin, 84, 79, 2016
2 One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layers
Ghadi H, Agarwal A, Adhikary S, Agawane J, Mandal A, Chakrabarti S, Pendyala NB, Prajapati S
Thin Solid Films, 566, 1, 2014
3 Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H-) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectors
Mandal A, Ghadi H, Mathur KL, Basu A, Subrahmanyam NBV, Singh P, Chakrabarti S
Materials Research Bulletin, 48(8), 2886, 2013