검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs Palestri P, Alexander C, Asenov A, Aubry-Fortuna V, Baccarani G, Bournel A, Braccioli M, Cheng B, Dollfus P, Esposito A, Esseni D, Fenouillet-Beranger C, Fiegna C, Fiori G, Ghetti A, Iannaccone G, Martinez A, Majkusiak B, Monfray S, Peikert V, Reggiani S, Riddet C, Saint-Martin J, Sangiorgi E, Schenk A, Selmi L, Silvestri L, Toniutti P, Walczak J Solid-State Electronics, 53(12), 1293, 2009 |
| 2 |
3D simulation study of gate coupling and gate cross-interference in advanced floating gate non-volatile memories Ghetti A, Bortesi L, Vendrame L Solid-State Electronics, 49(11), 1805, 2005 |
| 3 |
Hot-electron induced MOSFET gate current simulation by coupled silicon/oxide Monte Carlo device simulation Ghetti A Solid-State Electronics, 47(9), 1507, 2003 |
| 4 |
Ultra-thin gate oxide reliability projections Weir BE, Alam MA, Silverman PJ, Baumann F, Monroe D, Bude JD, Timp GL, Hamad A, Ma Y, Brown MM, Hwang D, Sorsch TW, Ghetti A, Wilk GD Solid-State Electronics, 46(3), 321, 2002 |
| 5 |
Insight into the relationship between hot electron degradation and substrate current in sub-0.1 mu m technologies Ghetti A, Bude J, Liu CT Solid-State Electronics, 45(9), 1591, 2001 |
| 6 |
Characterization of tunneling current in ultra-thin gate oxide Ghetti A, Liu CT, Mastrapasqua M, Sangiorgi E Solid-State Electronics, 44(9), 1523, 2000 |