화학공학소재연구정보센터
검색결과 : 27건
No. Article
1 Photoinduced charge transfer from Carbon Dots to Graphene in solid composite
Armano A, Buscarino G, Messina F, Sciortino A, Cannas M, Gelardi FM, Giannazzo F, Schiliro E, Agnello S
Thin Solid Films, 669, 620, 2019
2 Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy
Giannazzo F, Deretzis I, Nicotra G, Fisichella G, Spinella C, Roccaforte F, La Magna A
Applied Surface Science, 291, 53, 2014
3 Recent advances on dielectrics technology for SiC and GaN power devices
Roccaforte F, Fiorenza P, Greco G, Vivona M, Lo Nigro R, Giannazzo F, Patti A, Saggio M
Applied Surface Science, 301, 9, 2014
4 Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density
Greco G, Iucolano F, Bongiorno C, Giannazzo F, Krysko M, Leszczynski M, Roccaforte F
Applied Surface Science, 314, 546, 2014
5 High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H-SiC (0001)
Giannazzo F, Deretzis I, Nicotra G, Fisichella G, Ramasse QM, Spinella C, Roccaforte F, La Magna A
Journal of Crystal Growth, 393, 150, 2014
6 Critical issues for interfaces to p-type SiC and GaN in power devices
Roccaforte F, Frazzetto A, Greco G, Giannazzo F, Fiorenza P, Lo Nigro R, Saggio M, Leszczynski M, Pristawko P, Raineri V
Applied Surface Science, 258(21), 8324, 2012
7 Surface and interface issues in wide band gap semiconductor electronics
Roccaforte F, Giannazzo F, Iucolano F, Eriksson J, Weng MH, Raineri V
Applied Surface Science, 256(19), 5727, 2010
8 Nanoscale current transport through Schottky contacts on wide bandgap semiconductors
Giannazzo F, Roccaforte F, Iucolano F, Raineri V, Ruffino F, Grimaldi MG
Journal of Vacuum Science & Technology B, 27(2), 789, 2009
9 Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide
Sonde S, Giannazzo F, Raineri V, Rimini E
Journal of Vacuum Science & Technology B, 27(2), 868, 2009
10 Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study
Camarda M, La Magna A, Fiorenza P, Giannazzo F, La Via F
Journal of Crystal Growth, 310(5), 971, 2008