검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures Cordier Y, Azize M, Baron N, Bougrioua Z, Chenot S, Tottereau O, Massies J, Gibart P Journal of Crystal Growth, 310(5), 948, 2008 |
| 2 |
Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates Azize M, Bougrioua Z, Gibart P Journal of Crystal Growth, 299(1), 103, 2007 |
| 3 |
All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE-grown GaN Malinauskas T, Aleksiejunas R, Jarasiunas K, Beaumont B, Gibart P, Kakanakova-Georgieva A, Janzen E, Gogova D, Monemar B, Heuken M Journal of Crystal Growth, 300(1), 223, 2007 |
| 4 |
Photoelectric properties of highly excited GaN : Fe epilayers, zgrown by modulation- and continuous-doping techniques Bougrioua Z, Azize M, Beaumont B, Gibart P, Malinauskas T, Neimontas K, Mekys A, Storasta J, Jarasiunas K Journal of Crystal Growth, 300(1), 228, 2007 |
| 5 |
Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates Cordier Y, Hugues M, Semond F, Natali F, Lorenzini P, Bougrioua Z, Massies J, Frayssinet E, Beaumont B, Gibart P, Faurie JP Journal of Crystal Growth, 278(1-4), 383, 2005 |
| 6 |
LP MOVPE growth and characterization of high Al content Al(x)Ga1-N-x epilayers Touzi C, Omnes F, El Jani B, Gibart P Journal of Crystal Growth, 279(1-2), 31, 2005 |
| 7 |
Free-standing GaN grown on epitaxial lateral overgrown GaN substrates Martinez-Criado G, Kuball M, Benyoucef M, Sarua A, Frayssinet E, Beaumont B, Gibart P, Miskys CR, Stutzmann M Journal of Crystal Growth, 255(3-4), 277, 2003 |
| 8 |
AlGaN-based UV photodetectors Monroy E, Calle F, Pau JL, Munoz E, Omnes F, Beaumont B, Gibart P Journal of Crystal Growth, 230(3-4), 537, 2001 |
| 9 |
Growth of GaN on (111) Si: a route towards self-supported GaN Lahreche H, Nataf G, Feltin E, Beaumont B, Gibart P Journal of Crystal Growth, 231(3), 329, 2001 |
| 10 |
From relaxed to highly tensily strained GaN grown on 6H-SiC and Si(111): Optical characterization Leroux M, Lahreche H, Semond F, Laugt M, Feltin E, Schnell N, Beaumont B, Gibart P, Massies J Materials Science Forum, 353-356, 795, 2001 |