검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Silicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents Narimani K, Glass S, Bernardy P, von den Driesch N, Zhao QT, Mantl S Solid-State Electronics, 143, 62, 2018 |
| 2 |
Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material Reis F, Li G, Dudy L, Bauernfeind M, Glass S, Hanke W, Thomale R, Schafer J, Claessen R Science, 357(6348), 2017 |
| 3 |
Process modules for GeSn nanoelectronics with high Sn-contents Schulte-Braucks C, Glass S, Hofmann E, Stange D, von den Driesch N, Hartmann JM, Ikonic Z, Zhao QT, Buca D, Mantl S Solid-State Electronics, 128, 54, 2017 |
| 4 |
Varying the Schottky barrier of thin film Mg/H : p-Si(111) contacts: Properties and applications Nienhaus H, Krix D, Glass S Journal of Vacuum Science & Technology A, 25(4), 950, 2007 |