검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Boron ultrashallow junction formation in silicon by low-energy implantation and rapid thermal annealing in inert and oxidizing ambient Lerch W, Gluck M, Stolwijk NA, Walk H, Schafer M, Marcus SD, Downey DF, Chow JW Journal of the Electrochemical Society, 146(7), 2670, 1999 |
| 2 |
SiGeC : Band gaps, band offsets, optical properties, and potential applications Brunner K, Schmidt OG, Winter W, Eberl K, Gluck M, Konig U Journal of Vacuum Science & Technology B, 16(3), 1701, 1998 |
| 3 |
Si/SiGe field-effect transistors Konig U, Gluck M, Hock G Journal of Vacuum Science & Technology B, 16(5), 2609, 1998 |
| 4 |
Carrier mobilities in modulation doped Si1-xGex heterostructures with respect to FET applications Hock G, Gluck M, Hackbarth T, Herzog HJ, Kohn E Thin Solid Films, 336(1-2), 141, 1998 |
| 5 |
CoSi2 and TiSi2 for Si/SiGe Heterodevices Gluck M, Schuppen A, Rosler M, Heinrich W, Hersener J, Konig U, Yam O, Cytermann C, Eizenberg M Thin Solid Films, 270(1-2), 549, 1995 |