검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
p and n-type germanium layers grown using iso-butyl germane in a III-V metal-organic vapor phase epitaxy reactor Jakomin R, Beaudoin G, Gogneau N, Lamare B, Largeau L, Mauguin O, Sagnes I Thin Solid Films, 519(13), 4186, 2011 |
| 2 |
Development of ion sources from ionic liquids for microfabrication Perez-Martinez C, Guilet S, Gogneau N, Jegou P, Gierak J, Lozano P Journal of Vacuum Science & Technology B, 28(3), L25, 2010 |
| 3 |
One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots: First step towards single-photon source applications Gogneau N, Le Gratiet L, Cambril E, Beaudoin G, Patriarche G, Beveratos A, Hostein R, Robert-Philip I, Marzin JY, Sagnes I Journal of Crystal Growth, 310(15), 3413, 2008 |
| 4 |
Growth of GaN/AlN quantum dots on SiC(000(1)over-bar) by plasma-assisted MBE Gogneau N, Fossard F, Monroy E, Monnoye S, Mank H, Daudin B Materials Science Forum, 457-460, 1557, 2004 |
| 5 |
Control of the 2D/3D transition of cubic GaN/AlN nanostructures on 3C-SiC epilayers Founta S, Gogneau N, Martinez-Guerrero E, Ferro G, Monteil Y, Daudin B, Mariette H Materials Science Forum, 457-460, 1561, 2004 |
| 6 |
Growth of n-face polarity III-nitride heterostructures on C-face 4H-SiC by plasma-assisted MBE Monroy E, Sarigiannidou E, Fossard F, Enjalbert F, Gogneau N, Bellet-Amalric E, Brault J, Rouviere JL, Dang LS, Monnoye S, Mank H, Daudin B Materials Science Forum, 457-460, 1573, 2004 |
| 7 |
Direct growth of high quality GaN by plasma assisted molecular beam epitaxy on 4H-SiC substrates Fossard F, Brault J, Gogneau N, Monroy E, Enjalbert F, Dang LS, Bellet-Amalric E, Monnoye S, Mank H, Daudin B Materials Science Forum, 457-460, 1577, 2004 |
| 8 |
Photoluminescence of GaN/AlN quantum dots grown on SiC substrates Fossard F, Gogneau N, Monroy E, Dang LS, Monnoye S, Mank H, Daudin B Materials Science Forum, 457-460, 1593, 2004 |