검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Accuracy of secondary ion mass spectrometry in determining ion implanted B doses as confirmed by nuclear reaction analysis Magee CW, Jacobson D, Gossmann HJ Journal of Vacuum Science & Technology B, 18(1), 489, 2000 |
| 2 |
Sputtering rate change and surface roughening during oblique and normal incidence O-2(+) bombardment of silicon, with and without oxygen flooding Magee CW, Mount GR, Smith SP, Herner B, Gossmann HJ Journal of Vacuum Science & Technology B, 16(6), 3099, 1998 |
| 3 |
Morphology of TiSi2 Films on Si Formed from Co-Deposited Ti and Si Herner SB, Krishnamoorthy V, Naman A, Jones KS, Gossmann HJ, Tung RT Thin Solid Films, 302(1-2), 127, 1997 |
| 4 |
Surface Roughness-Induced Artifacts in Secondary-Ion Mass-Spectrometry Depth Profiling and a Simple Technique to Smooth the Surface Herner SB, Gila BP, Jones KS, Gossmann HJ, Poate JM, Luftman HS Journal of Vacuum Science & Technology B, 14(6), 3593, 1996 |
| 5 |
Electron-Beam-Induced Current Determination of Shallow Junction Depth Fitzgerald EA, Gossmann HJ, Unterwald FC, Luftman HS, Monroe D Journal of Vacuum Science & Technology B, 12(1), 357, 1994 |