검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Junction formation and its device impact through the nodes: From single to coimplants, from beam line to plasma, from single ions to clusters, and from rapid thermal annealing to laser thermal processing Gossmann HJL Journal of Vacuum Science & Technology B, 26(1), 267, 2008 |
| 2 |
Application of molecular dynamics for low-energy ion implantation in crystalline silicon Chan HY, Srinivasan MP, Montgomery NJ, Mulcahy CPA, Biswas S, Gossmann HJL, Harris M, Nordlund K, Benistant F, Ng CM, Gui D, Chan L Journal of Vacuum Science & Technology B, 24(1), 462, 2006 |
| 3 |
Impact of extension implant energy purity and angle on the electrical characteristics of a 65 nm device technology Gossmann HJL, Rubin L, Parrill T, Agarwal A Journal of Vacuum Science & Technology B, 24(4), 1705, 2006 |
| 4 |
Molecular dynamics with phase-shift-based electronic stopping for calibration of ion implantation profiles in crystalline silicon Chan HY, Nordlund K, Gossmann HJL, Harris M, Montgomery NJ, Mulcahy CPA, Biswas S, Srinivasan MP, Benistant F, Ng CM, Chan L Thin Solid Films, 504(1-2), 121, 2006 |
| 5 |
Reduction of polysilicon gate depletion effect in NMOS devices using laser thermal processing Chong YF, Gossmann HJL, Pey KL, Thompson MO, Wee ATS, Tung CH Electrochemical and Solid State Letters, 7(2), G25, 2004 |
| 6 |
Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric Yang B, Ye PD, Kwo J, Frei MR, Gossmann HJL, Mannaerts JP, Sergent M, Hong M, Bude KNJ Journal of Crystal Growth, 251(1-4), 837, 2003 |
| 7 |
Transient enhanced diffusion of B in Si implanted with decaborane cluster ions Sosnowski M, Albano MA, Li C, Gossmann HJL, Jacobson DC Journal of the Electrochemical Society, 149(8), G474, 2002 |