검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Gd silicate: A high-k dielectric compatible with high temperature annealing Gottlob HDB, Stefani A, Schmidt M, Lemme MC, Kurz H, Mitrovic IZ, Werner M, Davey WM, Hall S, Chalker PR, Cherkaoui K, Hurley PK, Piscator J, Engstrom O, Newcomb SB Journal of Vacuum Science & Technology B, 27(1), 249, 2009 |
| 2 |
Complementary metal oxide semiconductor integration of epitaxial Gd2O3 Lemme MC, Gottlob HDB, Echtermeyer TJ, Schmidt M, Kurz H, Endres R, Schwalke U, Czernohorkky M, Tetzlaff D, Osten HJ Journal of Vacuum Science & Technology B, 27(1), 258, 2009 |
| 3 |
Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors Lu Y, Hall S, Tan LZ, Mitrovic IZ, Davey WM, Raeissi B, Engstrom O, Cherkaoui K, Monaghan S, Hurley PK, Gottlob HDB, Lemme MC Journal of Vacuum Science & Technology B, 27(1), 352, 2009 |
| 4 |
Mobility extraction in SOI MOSFETs with sub 1 nm body thickness Schmidt M, Lemme MC, Gottlob HDB, Driussi F, Selmi L, Kurz H Solid-State Electronics, 53(12), 1246, 2009 |
| 5 |
Leakage current mechanisms in epitaxial Gd2O3 high-k gate dielectrics Gottlob HDB, Echtermeyer TJ, Schmidt M, Mollenhauer T, Wahlbrink T, Lemme MC, Kurz H Electrochemical and Solid State Letters, 11(3), G12, 2008 |
| 6 |
Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon Hurley PK, Cherkaoui K, O'Connor E, Lemme MC, Gottlob HDB, Schmidt M, Hall S, Lu Y, Buiu O, Raeissi B, Piscator J, Engstrom O, Newcomb SB Journal of the Electrochemical Society, 155(2), G13, 2008 |
| 7 |
High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy Raeissi B, Piscator J, Engstrom O, Hall S, Buiu O, Lemme MC, Gottlob HDB, Hurley PK, Cherkaoui K, Osten HJ Solid-State Electronics, 52(9), 1274, 2008 |
| 8 |
Investigation of MOS capacitors and SOI-MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes Echtermeyer T, Gottlob HDB, Wahlbrink T, Mollenhauer T, Schmidt M, Efavi JK, Lemme MC, Kurz H Solid-State Electronics, 51(4), 617, 2007 |
| 9 |
Navigation aids in the search for future high-k dielectrics: Physical and electrical trends Engstrom O, Raeissi B, Hall S, Buiu O, Lemme MC, Gottlob HDB, Hurley PK, Cherkaoui K Solid-State Electronics, 51(4), 622, 2007 |
| 10 |
Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high-k dielectrics Gottlob HDB, Mollenhauer T, Wahlbrink T, Schmidt M, Echtermeyer T, Efavi JK, Lemme MC, Kurz H Journal of Vacuum Science & Technology B, 24(2), 710, 2006 |