화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy
Reveret F, Andre Y, Gourmala O, Leymarie J, Mihailovic M, Lagarde D, Gil E, Castelluci D, Trassoudaine A
Journal of Crystal Growth, 421, 27, 2015
2 Complete HVPE experimental investigations: Cartography of SAG GaN towards quasi-substrates or nanostructures
Chelda-Gourmala O, Trassoudaine A, Andre Y, Bouchoule S, Gil E, Tourret J, Castelluci D, Cadoret R
Journal of Crystal Growth, 312(12-13), 1899, 2010
3 A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)
Tourret J, Gourmala O, Andre Y, Trassoudaine A, Gil E, Castelluci D, Cadoret R
Journal of Crystal Growth, 311(6), 1460, 2009
4 Low-cost high-quality GaN by one-step growth
Tourret J, Gourmala O, Trassoudaine A, Andre Y, Gil E, Castelluci D, Cadoret R
Journal of Crystal Growth, 310(5), 924, 2008