검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Highly sensitive, stable g-CN decorated with AgNPs for SERS sensing of toluidine blue and catalytic reduction of crystal violet Murugan E, Kumar SS, Reshna KM, Govindaraju S Journal of Materials Science, 54(7), 5294, 2019 |
| 2 |
Critical RF damage conditions for the plasma-assisted molecular beam epitaxy growth of GaInNAs with dilute N-2/Ar gas mix Reifsnider JM, Oye MM, Govindaraju S, Holmes AL Journal of Crystal Growth, 280(1-2), 7, 2005 |
| 3 |
Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems Oye MM, Ahn J, Cao C, Chen H, Fordyce W, Gazula D, Govindaraju S, Hurst JB, Lipson S, Lu D, Reifsnider JM, Shchekin O, Sidhu R, Sun X, Deppe DG, Holmes AL, Mattord TJ Journal of Vacuum Science & Technology A, 23(6), 1737, 2005 |
| 4 |
Inert gas maintenance for molecular-beam epitaxy systems Oye MM, Ahn J, Cao C, Chen H, Fordyce W, Gazula D, Govindaraju S, Hurst JB, Lipson S, Lu D, Reifsnider JM, Shchekin O, Sidhu R, Sun X, Deppe DG, Holmes AL, Mattord TJ Journal of Vacuum Science & Technology B, 23(3), 1257, 2005 |
| 5 |
Use of optical emission intensity to characterize an RF plasma source for MBE growth of GaAsN Reifsnider JM, Govindaraju S, Holmes AL Journal of Crystal Growth, 243(3-4), 396, 2002 |
| 6 |
Growth and characterization of Ga0.8In0.2(N)As quantum wells with GaNxAs1-x(x <= 0.05) barriers by plasma-assisted molecular beam epitaxy Govindaraju S, Holmes AL Journal of Vacuum Science & Technology B, 20(3), 1167, 2002 |
| 7 |
Molecular-beam epitaxy growth of Ga(In)NAs/GaAs heterostructures for photodiodes Gotthold D, Govindaraju S, Reifsnider J, Kinsey G, Campbell J, Holmes A Journal of Vacuum Science & Technology B, 19(4), 1400, 2001 |
| 8 |
Growth of GaNAs by molecular beam expitaxy using a N-2/Ar rf plasma Gotthold DW, Govindaraju S, Mattord T, Holmes AL, Streetman BG Journal of Vacuum Science & Technology A, 18(2), 461, 2000 |