검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems Goux L, Wang XP, Chen YY, Pantisano L, Jossart N, Govoreanu B, Kittl JA, Jurczak M, Altimime L, Wouters DJ Electrochemical and Solid State Letters, 14(6), H244, 2011 |
| 2 |
A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique Cho M, Degraeve R, Roussel P, Govoreanu B, Kaczer B, Zahid MB, Simoen E, Arreghini A, Jurczak M, Van Houdt J, Groeseneken G Solid-State Electronics, 54(11), 1384, 2010 |
| 3 |
Performance and reliability of HfAlOx-based interpoly dielectrics for floating-gate Flash memory Govoreanu B, Wellekens D, Haspeslagh L, Brunco DP, De Vos J, Aguado DR, Blomme P, van der Zanden K, Van Houdt J Solid-State Electronics, 52(4), 557, 2008 |
| 4 |
Scaling CMOS: Finding the gate stack with the lowest leakage current Kauerauf T, Govoreanu B, Degraeve R, Groeseneken G, Maes H Solid-State Electronics, 49(5), 695, 2005 |
| 5 |
Scaling down the interpoly dielectric for next generation - Flash memory: Challenges and opportunities Govoreanu B, Brunco DP, Van Houdt J Solid-State Electronics, 49(11), 1841, 2005 |
| 6 |
An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers Govoreanu B, Blomme P, Henson K, Van Houdt J, De Meyer K Solid-State Electronics, 48(4), 617, 2004 |
| 7 |
A model for tunneling current in multi-layer tunnel dielectrics Govoreanu B, Blomme P, Rosmeulen M, Van Houdt J, De Meyer K Solid-State Electronics, 47(6), 1045, 2003 |