검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure Suvar E, Haralson E, Radamson HH, Wang YB, Grahn JV, Malm BG, Ostling M Applied Surface Science, 224(1-4), 336, 2004 |
| 2 |
Implanted collector profile optimization in a SiGeHBT process Malm BG, Johansson T, Arnborg T, Norstrom H, Grahn JV, Ostling M Solid-State Electronics, 45(3), 399, 2001 |
| 3 |
A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget Grahn JV, Fosshaug H, Jargelius M, Jonsson P, Linder M, Malm BG, Mohadjeri B, Pejnefors J, Radamson HH, Sanden M, Wang YB, Landgren G, Ostling M Solid-State Electronics, 44(3), 549, 2000 |
| 4 |
On DC modeling of the base resistance in bipolar transistors Linder M, Ingvarson F, Jeppson KO, Grahn JV, Zhang SL, Ostling M Solid-State Electronics, 44(8), 1411, 2000 |
| 5 |
Influence of transient enhanced diffusion of the intrinsic base dopant profile on SiGeHBT DC and HF characteristics Malm BG, Grahn JV, Ostling M Solid-State Electronics, 44(10), 1747, 2000 |
| 6 |
In situ growth of evaporated TiO2 thin films using oxygen radicals : Effect of deposition temperature Grahn JV, Linder M, Fredriksson E Journal of Vacuum Science & Technology A, 16(4), 2495, 1998 |
| 7 |
Characterization of in-Situ Phosphorus-Doped Polycrystalline Silicon Films Grown by Disilane-Based Low-Pressure Chemical-Vapor-Deposition Grahn JV, Pejnefors J, Sanden M, Zhang SL, Ostling M Journal of the Electrochemical Society, 144(11), 3952, 1997 |