검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Room-temperature high spin-orbit torque due to quantum confinement in sputtered BixSe(1-x) films Mahendra DC, Grassi R, Chen JY, Jamali M, Hickey DR, Zhang DL, Zhao ZY, Li HS, Quarterman P, Lv Y, Li M, Manchon A, Mkhoyan KA, Low T, Wang JP Nature Materials, 17(9), 800, 2018 |
| 2 |
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells Zerveas G, Caruso E, Baccarani G, Czornomaz L, Daix N, Esseni D, Gnani E, Gnudi A, Grassi R, Luisier M, Markussen T, Osgnach P, Palestri P, Schenk A, Selmi L, Sousa M, Stokbro K, Visciarelli M Solid-State Electronics, 115, 92, 2016 |
| 3 |
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics Di Lecce V, Grassi R, Gnudi A, Gnani E, Reggiani S, Baccarani G Solid-State Electronics, 114, 23, 2015 |
| 4 |
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model Maiorano P, Gnani E, Grassi R, Gnudi A, Reggiani S, Baccarani G Solid-State Electronics, 98, 45, 2014 |
| 5 |
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback Grassi R, Gnudi A, Di Lecce V, Gnani E, Reggiani S, Baccarani G Solid-State Electronics, 100, 54, 2014 |
| 6 |
Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs Grassi R, Poli S, Gnani E, Gnudi A, Reggiani S, Baccarani G Solid-State Electronics, 53(4), 462, 2009 |
| 7 |
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials Grassi R, Poli S, Reggiani S, Gnani E, Gnudi A, Baccarani G Solid-State Electronics, 52(9), 1329, 2008 |