화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 Click chemistry enables preclinical evaluation of targeted epigenetic therapies
Tyler DS, Vappiani J, Caneque T, Lam EYN, Ward A, Gilan O, Chan YC, Hienzsch A, Rutkowska A, Werner T, Wagner AJ, Lugo D, Gregory R, Molina CR, Garton N, Wellaway CR, Jackson S, MacPherson L, Figueiredo M, Stolzenburg S, Bell CC, House C, Dawson SJ, Hawkins ED, Drewes G, Prinjha RK, Rodriguez R, Grandi P, Dawson MA
Science, 356(6345), 1397, 2017
2 Mitotic transcription and waves of gene reactivation during mitotic exit
Palozola Katherine C., Donahue Greg, Liu Hong, Grant Gregory R., Becker Justin S., Cote Allison, Yu Hongtao, Raj Arjun, Zaret Kenneth S.
Science, 358(6359), 119, 2017
3 BET inhibitor resistance emerges from leukaemia stem cells
Fong CY, Gilan O, Lam EYN, Rubin AF, Ftouni S, Tyler D, Stanley K, Sinha D, Yeh P, Morison J, Giotopoulos G, Lugo D, Jeffrey P, Lee SCW, Carpenter C, Gregory R, Ramsay RG, Lane SW, Abdel-Wahab O, Kouzarides T, Johnstone RW, Dawson SJ, Huntly BJP, Prinjha RK, Papenfuss AT, Dawson MA
Nature, 525(7570), 538, 2015
4 Genome Sequence of the Tsetse Fly (Glossina morsitans): Vector of African Trypanosomiasis
Watanabe J, Hattori M, Berriman M, Lehane MJ, Hall N, Solano P, Aksoy S, Hide W, Toure Y, Attardo GM, Darby AC, Toyoda A, Hertz-Fowler C, Larkin DM, Cotton JA, Watanabe J, Sanders MJ, Swain MT, Hattori M, Berriman M, Quail MA, Inoue N, Ravel S, Taylor TD, Srivastava TP, Sharma V, Warren W, Wilson RK, Suzuki Y, Lawson D, Hughes DST, Megy K, Masiga DK, Mireji PO, Attardo GM, Hansen IA, Van den Abbeele J, Benoit JB, Bourtzis K, Lehane MJ, Aksoy S, Masiga DK, Obiero GFO, Robertson HM, Jones JW, Zhou JJ, Field LM, Friedrich M, Mireji PO, Nyanjom SRG, Telleria EL, Caljon G, Van den Abbeele J, Ribeiro JMC, Acosta-Serrano A, Benoit JB, Ooi CP, Rose C, Price DP, Haines LR, Lehane MJ, Christoffels A, Sim C, Pham DQD, Denlinger DL, Geiser DL, Omedo IA, Benoit JB, Winzerling JJ, Peyton JT, Marucha KK, Jonas M, Meuti ME, Rawlings ND, Mireji PO, Zhang QR, Macharia RW, Michalkova V, Dashti ZJS, Baumann AA, Gade G, Marco HG, Hansen IA, Caers J, Schoofs L, Riehle MA, Hu WQ, Tu ZJ, Tarone AM, Malacrida AR, Kibet CK, Benoit JB, Scolari F, Attardo GM, Koekemoer JJO, Willis J, Gomulski LM, Falchetto M, Scott MJ, Fu SH, Sze SH, Luiz T, Weiss B, Walshe DP, Wang JW, Benoit JB, Attardo GM, Wamalwa M, Mwangi S, Aksoy S, Ramphul UN, Snyder AK, Brelsfoard CL, Thomas GH, Tsiamis G, Bourtzis K, Arensburger P, Rio RVM, Macdonald SJ, Panji S, Kruger A, Christoffels A, Benkahla A, Balyeidhusa ASP, Msangi A, Ooi CP, Okoro CK, Masiga DK, Stephens D, Walshe DP, Stanley EJ, Mpondo F, Wamwiri F, Mramba F, Attardo GM, Siwo G, Obiero GFO, Githinji G, Harkins G, Murilla G, Lehvaslaiho H, Malele I, Koekemoer JJO, Auma JE, Kinyua JK, Ouma J, Watanabe J, Megy K, Okedi L, Manga L, Jonas M, Wamalwa M, Aslett M, Koffi M, Berriman M, Lehane MJ, Gaunt MW, Makgamathe M, Hall N, Mulder N, Manangwa O, Abila PP, Wincker P, Mireji PO, Gregory R, Rio RVM, Bateta R, Sakate R, Aksoy S, Ommeh S, Lehane S, Nyanjom SRG, Imanishi T, Taylor TD, Osamor VC, Sharma V, Hide W, Kawahara Y, Benoit JB
Science, 344(6182), 380, 2014
5 Physical and electrical properties of atomic-layer-deposited HfxZr1-xO2 with TEMAHf, TEMAZr, and ozone
Triyoso DH, Gregory R, Park M, Wang K, Lee SI
Journal of the Electrochemical Society, 155(1), H43, 2008
6 Impact of deposition processes on properties of atomic-layer-deposited hafnium zirconate high-k dielectrics
Triyoso DH, Hegde RI, Gregory R
Electrochemical and Solid State Letters, 10(12), H354, 2007
7 Characteristics of atomic-layer-deposited thin HfxZr1-xO2 gate dielectrics
Triyoso DH, Hegde RI, Schaeffer JK, Gregory R, Wang XD, Canonico M, Roan D, Hebert EA, Kim K, Jiang J, Rai R, Kaushik V, Samavedam SB, Rochat N
Journal of Vacuum Science & Technology B, 25(3), 845, 2007
8 GdGaO: A gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors
Holland M, Stanley CR, Reid W, Thayne I, Paterson GW, Long AR, Longo P, Scott J, Craven AJ, Gregory R
Journal of Vacuum Science & Technology B, 25(3), 1024, 2007
9 Quantitative SIMS analysis of SiGe composition with low energy O-2(+) beams
Jiang ZX, Kim K, Lerma J, Corbett A, Sieloff D, Kottke M, Gregory R, Schauer S
Applied Surface Science, 252(19), 7262, 2006
10 Impact of deposition and annealing temperature on material and electrical characteristics of ALD HfO2
Triyoso D, Liu R, Roan D, Ramon M, Edwards NV, Gregory R, Werho D, Kulik J, Tam G, Irwin E, Wang XD, La LB, Hobbs C, Garcia R, Baker J, White BE, Tobin P
Journal of the Electrochemical Society, 151(10), F220, 2004