검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
High PAE high reliability AlN/GaN double heterostructure Medjdoub F, Zegaoui M, Linge A, Grimbert B, Silvestri R, Meneghini M, Meneghesso G, Zanoni E Solid-State Electronics, 113, 49, 2015 |
| 2 |
Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs Berthet F, Guhel Y, Gualous H, Boudart B, Trolet JL, Piccione M, Sbrugnera V, Grimbert B, Gaquiere C Solid-State Electronics, 72, 15, 2012 |
| 3 |
In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD Poisson MADF, Sarazin N, Magis M, Tordjman M, Morvan E, Aubry R, di Persio J, Grimbert B Journal of Crystal Growth, 298, 826, 2007 |
| 4 |
LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices Poisson MAD, Magis M, Tordjman M, Aubry R, Sarazin N, Peschang M, Morvan E, Delage SL, di Persio J, Quere R, Grimbert B, Hoel V, Delos E, Ducatteau D, Gaquiere C Journal of Crystal Growth, 272(1-4), 305, 2004 |