검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
First-principles study on electronic structure, phase stability, and optical properties of In2X2O7 (X= C, Si, Ge or Sn) Karazhanov SZ, Ravindran P, Grossner U Thin Solid Films, 519(19), 6561, 2011 |
| 2 |
Improvement of ZnO thin film properties by application of ZnO buffer layers Khranovskyy V, Minikayev R, Trushkin S, Lashkarev G, Lazorenko V, Grossner U, Paszkowicz W, Suchocki A, Svensson BG, Yakimova R Journal of Crystal Growth, 308(1), 93, 2007 |
| 3 |
Electronic structure and band parameters for ZnX (X = O, S, Se, Te) Karazhanov SZ, Ravindran P, Kjekhus A, Fjellvag H, Grossner U, Svensson BG Journal of Crystal Growth, 287(1), 162, 2006 |
| 4 |
Structural and morphological properties of ZnO : Ga thin films Khranovskyy V, Grossner U, Nilsen O, Lazorenko V, Lashkarev GV, Svensson BG, Yakimova R Thin Solid Films, 515(2), 472, 2006 |
| 5 |
Electrical properties of aluminum oxide films grown by atomic layer deposition on n-type 4H-SiC Avice M, Grossner U, Monakhov EV, Grillenberger J, Nilsen O, Fjellvag H, Svensson BG Materials Science Forum, 483, 705, 2005 |
| 6 |
Investigation of electronic states of Pd in 4H-SiC by means of Radiotracer-DLTS Grossner U, Grillenberger J, Albrecht F, Pasold G, Sielemann R, Svensson BG, Witthuhn W Materials Science Forum, 457-460, 791, 2004 |
| 7 |
Structural and optical properties of epitaxial CuGaS2 films on Si substrates Metzner H, Cieslak J, Grossner U, Hahn T, Kaiser U, Krausslich J, Reislohner U, Witthuhn W, Goldhahn R, Eberhardt J Thin Solid Films, 431-432, 219, 2003 |
| 8 |
Towards quantum structures in SiC Bechstedt F, Fissel A, Grossner U, Kaiser U, Weissker HC, Wesch W Materials Science Forum, 389-3, 737, 2002 |
| 9 |
A deep erbium-related bandgap state in 4H silicon carbide Pasold G, Albrecht F, Grillenberger J, Grossner U, Hulsen C, Sielemann R, Witthuhn W Materials Science Forum, 433-4, 487, 2002 |
| 10 |
Interplay of surface structure, band stacking and heteropolytypic growth of SiC Grossner U, Fissel A, Furthmuller J, Richter W, Bechstedt F Materials Science Forum, 353-356, 211, 2001 |