| 1 |
Two dimensional mass transfer in flat layers and lateral diffusion effect in permeability determination
Wichterle K, Vecer M
International Journal of Heat and Mass Transfer, 63, 9, 2013 |
| 2 |
Investigation of the ion dose non-uniformity caused by sheath-lens focusing effect on silicon wafers
Holtzer N, Stamate E, Toyoda H, Sugai H
Thin Solid Films, 515(12), 4887, 2007 |
| 3 |
Demonstration of high-power X-band oscillation in p(+)/n(-)/n(+) 4H-SiC IMPATT diodes with guard-ring termination
Ono S, Arai M, Kimura C
Materials Science Forum, 483, 981, 2005 |
| 4 |
High-voltage planar Si detectors for high-energy physics experiments: comparison between metal-overhang and field-limiting ring techniques
Ranjan K, Bhardwaj A, Namrata, Chatterji S, Srivastava AK, Jha MK, Kumar A, Shivpuri RK
Solid-State Electronics, 48(9), 1587, 2004 |
| 5 |
Performance of 4H-SiC Schottky diodes with Al-doped p-guard-ring junction termination at reverse bias
Felsl HP, Wachutka G
Materials Science Forum, 389-3, 1153, 2002 |
| 6 |
Design and characterization of 2.5kV 4H-SiC JBS rectifiers with self-aligned guard ring termination
Sheridan DC, Merrett JN, Cressler JD, Saddow SE, Williams Jr, Ellis CE, Niu G
Materials Science Forum, 353-356, 687, 2001 |
| 7 |
Theoretical and experimental study of 4H-SiC junction edge termination
Li XQ, Tone K, Cao LH, Alexandrov P, Fursin L, Zhao JH
Materials Science Forum, 338-3, 1375, 2000 |
