검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3 Azzaz M, Benoist A, Vianello E, Garbin D, Jalaguier E, Cagli C, Charpin C, Bernasconi S, Jeannot S, Dewolf T, Audoit G, Guedj C, Denorme S, Candelier P, Fenouillet-Beranger C, Perniola L Solid-State Electronics, 125, 182, 2016 |
| 2 |
Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs Jousseaume V, Fantini A, Nodin JF, Guedj C, Persico A, Buckley J, Tirano S, Lorenzi P, Vignon R, Feldis H, Minoret S, Grampeix H, Roule A, Favier S, Martinez E, Calka P, Rochat N, Auvert G, Barnes JP, Gonon P, Vallee C, Perniola L, De Salvo B Solid-State Electronics, 58(1), 62, 2011 |
| 3 |
Electrical and Chemical Properties of the HfO2/SiO2/Si Stack: Impact of HfO2 Thickness and Thermal Budget Martinez E, Leroux C, Benedetto N, Gaumer C, Charbonnier M, Licitra C, Guedj C, Fillot F, Lhostis S Journal of the Electrochemical Society, 156(8), G120, 2009 |
| 4 |
Pore sealing of a porous dielectric by using a thin PECVD a-SiC : H conformal liner Jousseaume V, Fayolle M, Guedj C, Haumesser PH, Huguet C, Pierre F, Pantel R, Feldis H, Passemard G Journal of the Electrochemical Society, 152(10), F156, 2005 |
| 5 |
UHV-CVD Heteroepitaxial Growth of Si1-xGex Alloys on Si(100) Using Silane and Germane Vinh LT, Aubryfortuna V, Zheng Y, Bouchier D, Guedj C, Hincelin G Thin Solid Films, 294(1-2), 59, 1997 |
| 6 |
Carbon and Germanium Distributions in Si1-X-Ygexcy Layers Epitaxially Grown on Si(001) by Rtcvd Guedj C, Portier X, Hairie A, Bouchier D, Calvarin G, Piriou B Thin Solid Films, 294(1-2), 129, 1997 |
| 7 |
Incorporation of Substitutional Carbon in Si and SiGe by Laser Processing in Methane and Propylene Boulmer J, Guedj C, Debarre D Thin Solid Films, 294(1-2), 137, 1997 |
| 8 |
Growth of Si1-X-Ygexcy Multiquantum Wells - Structural and Optical-Properties Boucaud P, Guedj C, Julien FH, Finkman E, Bodnar S, Regolini JL Thin Solid Films, 278(1-2), 114, 1996 |