| 1 |
200 GHz InP DHBT technology using selectively implanted buried sub-collector (SIBS) for broadband amplifiers
Li JC, Lao ZH, Chen MY, Rajavel RD, Thomas S, Bui SS, Shi BQ, Guinn KV, Duvall JR, Hitko DA, Chow DH, Sokolich M
Solid-State Electronics, 51(1), 1, 2007 |
| 2 |
Chemical Challenge of Submicron Oxide Etching
Mcnevin SC, Guinn KV, Taylor JA
Journal of Vacuum Science & Technology B, 15(2), 214, 1997 |
| 3 |
Mechanism for Anisotropic Etching of Photoresist-Masked, Polycrystalline Silicon in HBr Plasmas
Cheng CC, Guinn KV, Donnelly VM
Journal of Vacuum Science & Technology B, 14(1), 85, 1996 |
| 4 |
Comparison of Advanced Plasma Sources for Etching Applications .5. Polysilicon Etching Rate, Uniformity, Profile Control, and Bulk Plasma Properties in a Helical Resonator Plasma Source
Lee JT, Layadi N, Guinn KV, Maynard HL, Klemens FP, Ibbotson DE, Tepermeister I, Egan PO, Richardson RA
Journal of Vacuum Science & Technology B, 14(4), 2510, 1996 |
| 5 |
Competitive Halogenation of Silicon Surfaces in HBr/Cl-2 Plasmas Studied Ray Photoelectron-Spectroscopy and in-Situ, Real-Time, Pulsed Laser-Induced Thermal-Desorption
Cheng CC, Guinn KV, Herman IP, Donnelly VM
Journal of Vacuum Science & Technology A, 13(4), 1970, 1995 |
| 6 |
Quantitative Chemical Topography of Polycrystalline Si Anisotropically Etched in Cl-2/O-2 High-Density Plasmas
Guinn KV, Cheng CC, Donnelly VM
Journal of Vacuum Science & Technology B, 13(2), 214, 1995 |
| 7 |
In-Situ Pulsed Laser-Induced Thermal-Desorption Studies of the Silicon Chloride Surface-Layer During Silicon Etching in High-Density Plasmas of Cl2 and Cl2/O2 Mixtures
Cheng CC, Guinn KV, Donnelly VM, Herman IP
Journal of Vacuum Science & Technology A, 12(5), 2630, 1994 |
