| 1 |
Experimental study of the orientation dependence of indium incorporation in GaInN
Bhat R, Guryanov GM
Journal of Crystal Growth, 433, 7, 2016 |
| 2 |
Reply to "Comments on'Experimental study of the orientation dependence of indium incorporation in GaInN'" by Morteza Monavarian
Bhat R, Guryanov GM
Journal of Crystal Growth, 445, 108, 2016 |
| 3 |
F and Cl detection limits in secondary ion mass spectrometry measurements of Si and SiO2 samples
Pivovarov AL, Guryanov GM
Journal of Vacuum Science & Technology A, 28(5), 1181, 2010 |
| 4 |
Cluster ion emission from nitrogen-doped GaAs and optimization of SIMS conditions for nitrogen analysis
Guryanov GM
Applied Surface Science, 231-2, 817, 2004 |
| 5 |
Optimization of secondary ion mass spectrometry detection limit for N in SiC
Pivovarov AL, Stevie FA, Griffis DP, Guryanov GM
Journal of Vacuum Science & Technology A, 21(5), 1649, 2003 |
| 6 |
Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs+, O-2(+), and CsC6- primary ion beams
Loesing R, Guryanov GM, Phillips MS, Griffis DP
Journal of Vacuum Science & Technology B, 20(2), 507, 2002 |
| 7 |
Secondary ion mass spectrometry depth profiling of ultrashallow phosphorous in silicon
Loesing R, Guryanov GM, Hunter JL, Griffis DP
Journal of Vacuum Science & Technology B, 18(1), 509, 2000 |
