검색결과 : 47건
| No. | Article |
|---|---|
| 1 |
Three-dimensional integration in microelectronics: Motivation, processing, and thermomechanical modeling Cale TS, Lu JQ, Gutmann RJ Chemical Engineering Communications, 195(8), 847, 2008 |
| 2 |
Evaluation of BCB bonded and thinned wafer stacks for three-dimensional integration Kwon Y, Jindal A, Augur R, Seok J, Cale TS, Gutmann RJ, Lu JQ Journal of the Electrochemical Society, 155(5), H280, 2008 |
| 3 |
고온 열순환 공정이 BCB와 PECVD 산화규소막 계면의 본딩 결합력에 미치는 영향에 대한 연구 권용재, 석종원, Lu JQ, Cale TS, Gutmann RJ Korean Chemical Engineering Research, 46(2), 389, 2008 |
| 4 |
Low-temperature titanium-based wafer bonding Ti/Si, Ti/SiO2, and Ti/Ti Yu J, Wang YM, Moore RL, Lu JQ, Gutmann RJ Journal of the Electrochemical Society, 154(1), H20, 2007 |
| 5 |
Critical adhesion energy at the interface between benzocyclobutene and silicon nitride layers Kwon Y, Seok J, Lu JQ, Cale TS, Gutmann RJ Journal of the Electrochemical Society, 154(6), H460, 2007 |
| 6 |
Adhesive wafer bonding using partially cured benzocyclobutene for three-dimensional integration Niklaus F, Kumar RJ, McMahon JJ, Yu J, Lu JQ, Cale TS, Gutmann RJ Journal of the Electrochemical Society, 153(4), G291, 2006 |
| 7 |
Critical adhesion energy of benzocyclobutene-bonded wafers Kwon Y, Seok J, Lu JQ, Cale TS, Gutmann RJ Journal of the Electrochemical Society, 153(4), G347, 2006 |
| 8 |
Thermal cycling effects on critical adhesion energy and residual stress in benzocyclobutene-bonded wafers Kwon Y, Seok J, Lu JQ, Cale TS, Gutmann RJ Journal of the Electrochemical Society, 152(4), G286, 2005 |
| 9 |
Characterization of 4H-SiC epitaxial layers by microwave photoconductivity decay Kumar RJ, Losee PA, Li C, Seiler J, Bhat IB, Chow TP, Borrego JM, Gutmann RJ Materials Science Forum, 483, 405, 2005 |
| 10 |
Electrical characteristics and reliability of 4H-SiC pin diodes fabricated on in-house grown and commercial epitaxial films Losee PA, Li C, Seiler J, Stahlbush RE, Chow TP, Bhat IB, Gutmann RJ Materials Science Forum, 483, 961, 2005 |