검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz Deng M, Quemerais T, Bouvot S, Gloria D, Chevalier P, Lepilliet S, Danneville F, Dambrine G Solid-State Electronics, 129, 150, 2017 |
| 2 |
Recombination in the Ge-spiked monoemitter of the SiGe:C HBTs You SZ, Decoutere S, Sibaja-Hernandez A, Venegas R, Van Huylenbroeck S, De Meyer K Solid-State Electronics, 61(1), 81, 2011 |
| 3 |
Implementation of a scalable VBIC model for SiGe : C HBTs Chakravorty A, Scholz RF, Knoll D, Fox A, Senapati B, Maiti CK Solid-State Electronics, 50(3), 399, 2006 |
| 4 |
Damage to III-V devices during electron cyclotron resonance chemical vapor deposition Lee JW, Mackenzie KD, Johnson D, Hahn YB, Hays DC, Abernathy CR, Ren F, Pearton SJ Journal of Vacuum Science & Technology A, 17(4), 2183, 1999 |
| 5 |
Ultrashallow secondary ion mass spectroscopy depth profiling of doping spikes and Si/SiGe/Si heterostructures using different primary species Kruger D, Iltgen K, Heinemann B, Kurps R, Benninghoven A Journal of Vacuum Science & Technology B, 16(1), 292, 1998 |
| 6 |
Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers Lin YS, Shieh HM, Hsu WC, Su JS, Huang JZ, Wu YH, Ho SD, Lin W Journal of Vacuum Science & Technology B, 16(3), 958, 1998 |
| 7 |
Double-Layer Mu-C-Si/A-Sicx Emitter in a Silicon Heterojunction Bipolar-Transistor with a Cutoff Frequency of 47-GHz Kondo M, Shiba T, Tamaki Y, Nakamura T Journal of the Electrochemical Society, 143(6), 1949, 1996 |
| 8 |
Commercial Heterojunction Bipolar-Transistor Production by Molecular-Beam Epitaxy Streit DC, Oki AK, Block TR, Lammert MD, Hoppe MM, Umemoto DK, Wojtowicz M Journal of Vacuum Science & Technology B, 14(3), 2216, 1996 |
| 9 |
Fabrication of Self-Aligned GaAs/AlGaAs and GaAs/InGaP Microwave-Power Heterojunction Bipolar-Transistors Ren F, Lothian JR, Pearton SJ, Abernathy CR, Wisk PW, Fullowan TR, Tseng B, Chu SN, Chen YK, Yang LW, Fu ST, Brozovich RS, Lin HH, Henning CL, Henry T Journal of Vacuum Science & Technology B, 12(5), 2916, 1994 |