검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices Huang HL, Liang YC Solid-State Electronics, 114, 148, 2015 |
| 2 |
Recent advances on dielectrics technology for SiC and GaN power devices Roccaforte F, Fiorenza P, Greco G, Vivona M, Lo Nigro R, Giannazzo F, Patti A, Saggio M Applied Surface Science, 301, 9, 2014 |
| 3 |
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures Wang CM, Wang XL, Hu GX, Wang JX, Xiao HL, Li JP Journal of Crystal Growth, 289(2), 415, 2006 |