검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Efficient hydrogen production from irradiated aluminum hydroxides Kaddissy JA, Esnouf S, Saffre D, Renault JP International Journal of Hydrogen Energy, 44(7), 3737, 2019 |
| 2 |
Characterization of defects in titanium created by hydrogen charging HruSka P, Cizek J, Knapp J, Lukac F, Melikhova O, Maskova S, Havela L, Drahokoupil J International Journal of Hydrogen Energy, 42(35), 22557, 2017 |
| 3 |
Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique Kolkovsky V, Stubner R, Langa S, Wende U, Kaiser B, Conrad H, Schenk H Solid-State Electronics, 123, 89, 2016 |
| 4 |
Influence of reducing atmosphere on the defect chemistry of lead lanthanum zirconate titanate (8/65/35) Schaab S, Schulz M, Fritze H, Eichel RA, Erdem E, Ruscher CH, Hummelt S, Granzow T Solid State Ionics, 228, 56, 2012 |
| 5 |
Ab initio study of field emission from hydrogen defects in diamond subsurfaces Araidai M, Watanabe K Applied Surface Science, 237(1-4), 482, 2004 |
| 6 |
Deuterium conductivity, diffusion and implantation in Sr-doped LaYO3 Ruiz-Trejo E, Kilner JA Solid State Ionics, 130(3-4), 313, 2000 |
| 7 |
Studies of surface wettability conversion on TiO2 single-crystal surfaces Wang R, Sakai N, Fujishima A, Watanabe T, Hashimoto K Journal of Physical Chemistry B, 103(12), 2188, 1999 |
| 8 |
Thermal stability of a-SiNx : H films deposited by plasma electron cyclotron resonance Martinez FL, del Prado A, Bravo D, Lopez F, Martil I, Gonzalez-Diaz G Journal of Vacuum Science & Technology A, 17(4), 1280, 1999 |
| 9 |
Deuterium sintering of silicon-on-insulator structures: D diffusion and replacement reactions at the SiO2/Si interface Wallace RM, Chen PJ, Archer LB, Anthony JM Journal of Vacuum Science & Technology B, 17(5), 2153, 1999 |
| 10 |
Negative electron affinity of cesiated p-GaN(0001) surfaces Eyckeler M, Monch W, Kampen TU, Dimitrov R, Ambacher O, Stutzmann M Journal of Vacuum Science & Technology B, 16(4), 2224, 1998 |