| 1 |
Water wettability of Si(111) and (001) surfaces prepared to be reconstructed, atomic-hydrogen terminated and thinly oxidized in an ultrahigh vacuum chamber
Miyagi T, Sasahara A, Tomitori M
Applied Surface Science, 349, 904, 2015 |
| 2 |
Surface stress measurement of Si(111) 7 x 7 reconstruction by comparison with hydrogen-terminated 1 x 1 surface
Asaoka H, Uozumi Y
Thin Solid Films, 591, 200, 2015 |
| 3 |
Microtribological study of perfluoropolyether with different functional groups coated on hydrogen terminated Si
Minn M, Satyanarayana N, Sinha SK, Kondo H
Applied Surface Science, 258(7), 2350, 2012 |
| 4 |
Chemical, energetic, and geometric heterogeneity of device-quality (100) surfaces of single crystalline silicon after HFaq etching
Cerofolini GF, Giussani A, Modelli A, Mascolo D, Ruggiero D, Narducci D, Romano E
Applied Surface Science, 254(18), 5781, 2008 |
| 5 |
Theoretical study on hydrogen reaction processes on H/Si(001) surface
Takahashi N, Nara J, Uda T, Nakamura Y, Tateyama Y, Ohno T
Applied Surface Science, 244(1-4), 190, 2005 |
| 6 |
Wet-chemical preparation and spectroscopic characterization of Si interfaces
Angermann H, Henrion W, Rebien M, Roseler A
Applied Surface Science, 235(3), 322, 2004 |
| 7 |
Adsorption of Si atom on H-terminated Si(001)-2 x 1 surface
Hashizume T, Kajiyama H, Suwa Y, Heike S, Matsuura S, Nara J, Ohno T
Applied Surface Science, 216(1-4), 15, 2003 |
| 8 |
Theoretical study on the initial processes of nitridation of silicon thin film
Yoshida S, Doi K, Nakamura K, Tachibana A
Applied Surface Science, 216(1-4), 141, 2003 |
| 9 |
Improvement of hot-carrier-reliability by deuterium termination of Si/SiO2 interface defects
Takahashi H, Yamada-Kaneta H
Applied Surface Science, 216(1-4), 347, 2003 |
| 10 |
Influence of interface structures on Sn thin film growth on Si(111) surface
Ryu JT, Fujino T, Katayama M, Kim YB, Oura K
Applied Surface Science, 190(1-4), 139, 2002 |
