화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Nondestructive evaluation of alternative substrate quality using glancing-incidence x-ray diffraction and Raman spectroscopy
Haugan HJ, Cain AM, Haas TW, Eyink KG, Eiting CJ, Tomich DH, Grazulis L, Busbee JD
Journal of Vacuum Science & Technology A, 21(1), 110, 2003
2 Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C-60 and Si effusion cells
Lampert WV, Eiting CJ, Smith SA, Mahalingam K, Grazulis L, Haas TW
Journal of Crystal Growth, 234(2-3), 369, 2002
3 Mechanical lithography using a single point diamond machining
Goss SH, Grazulis L, Tomich DH, Eyink KG, Walck SD, Haas TW, Thomas DR, Lampert WV
Journal of Vacuum Science & Technology B, 16(3), 1439, 1998
4 Strain effects on thermal transitions and mechanical properties of thermoplastic polyurethane elastomers
Crawford DM, Bass RG, Haas TW
Thermochimica Acta, 323(1-2), 53, 1998
5 Characterization of Low-Temperature-Grown AlSb and GaSb Buffer Layers
Eyink KG, Seaford ML, Haas TW, Tomich DH, Lampert WV, Walck SD, Solomon JS, Mitchel WC, Eastman LF
Journal of Vacuum Science & Technology B, 15(4), 1187, 1997
6 In-Situ and Ex-Situ Spectroscopic Investigation of Low-Temperature-Grown Gallium-Arsenide by Molecular-Beam Epitaxy
Eyink KG, Capano MA, Walck SD, Haas TW, Streetman BG
Journal of Vacuum Science & Technology B, 14(3), 2278, 1996
7 Metallurgy of Al-Ni-Ge Ohmic Contact Formation on N-GaAs
Lin XW, Lampert WV, Haas TW, Holloway PH, Lilientalweber Z, Swider W, Washburn J
Journal of Vacuum Science & Technology B, 13(5), 2081, 1995
8 Sulfur Passivation of AlxGa1-xAs for Ohmic Contact Formation
Fischer V, Ristolainen E, Holloway PH, Lampert WV, Haas TW
Journal of Vacuum Science & Technology A, 12(4), 1103, 1994
9 Morphology of Al-Ni-Ge Ohmic Contacts to N-GaAs as a Function of Contact Composition
Lin XW, Lampert WV, Swider W, Haas TW, Holloway PH, Washburn J, Lilientalweber Z
Thin Solid Films, 253(1-2), 490, 1994