화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Novel approach for n-type doping of HVPE gallium nitride with germanium
Hofmann P, Krupinski M, Habel F, Leibiger G, Weinert B, Eichler S, Mikolajick T
Journal of Crystal Growth, 450, 61, 2016
2 Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN
Meissner E, Schweigard S, Friedrich J, Paskova T, Udwary K, Leibiger G, Habel F
Journal of Crystal Growth, 340(1), 78, 2012
3 Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE
Richter E, Hennig C, Weyers M, Habel F, Tsay JD, Liu WY, Bruckner P, Scholz F, Makarov Y, Segal A, Kaeppeler J
Journal of Crystal Growth, 277(1-4), 6, 2005
4 Marker layers for the development of a multistep GaNFACELO process
Habel F, Bruckner P, Scholz F
Journal of Crystal Growth, 272(1-4), 515, 2004