검색결과 : 22건
| No. | Article |
|---|---|
| 1 |
Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment Ashraf H, Rao DVS, Gogova D, Siche D, Fornari R, Humphreys CJ, Hageman PR Journal of Crystal Growth, 312(4), 595, 2010 |
| 2 |
Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism Ashraf H, Kudrawiec R, Weyher JL, Serafinczuk J, Misiewicz J, Hageman PR Journal of Crystal Growth, 312(16-17), 2398, 2010 |
| 3 |
Enhanced growth rates and reduced parasitic deposition by the substitution of Cl-2 for HCl in GaN HVPE Bohnen T, Ashraf H, van Dreumel GWG, Verhagen S, Weyher JL, Hageman PR, Vlieg E Journal of Crystal Growth, 312(18), 2542, 2010 |
| 4 |
ScAlN nanowires: A cathodoluminescence study Bohnen T, Yazdi GR, Yakimova R, van Dreumel GWG, Hageman PR, Vlieg E, Algra RE, Verheijen MA, Edgar JH Journal of Crystal Growth, 311(11), 3147, 2009 |
| 5 |
On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes Bohnen T, de Jong AEF, van Enckevort WJP, Weyher JL, van Dreumel GWG, Ashraf H, Hageman PR, Vlieg E Journal of Crystal Growth, 311(23-24), 4685, 2009 |
| 6 |
HVPE of scandium nitride on 6H-SiC(0001) Edgar JH, Bohnen T, Hageman PR Journal of Crystal Growth, 310(6), 1075, 2008 |
| 7 |
Thick GaN layers grown by HVPE: Influence of the templates Ashraf H, Weyher JL, van Dreumel GWG, Gzregorzyck A, Hageman PR Journal of Crystal Growth, 310(17), 3957, 2008 |
| 8 |
Influence of sapphire annealing in a trimethylaluminum atmosphere on GaN epitaxy by metal-organic chemical vapor deposition Grzegorczyk AP, Weyher JL, Hageman PR, Larsen PK Thin Solid Films, 516(8), 2314, 2008 |
| 9 |
Influence of In on the surface morphology of HYPE grown GaN Dam CEC, Hageman PR, van Enckevort WJP, Bohnen T, Larsen PK Journal of Crystal Growth, 307(1), 19, 2007 |
| 10 |
Screening effect in contactless electroreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas Motyka M, Kudrawiec R, Syperek M, Misiewicz J, Rudzinski M, Hageman PR, Larsen PK Thin Solid Films, 515(11), 4662, 2007 |