| 1 |
An alternative method for measurement of charge carrier mobility in semiconductors using photocurrent transient response
Ahn IH, Kyhm J, Lee J, Cho S, Jo Y, Kim DY, Choi SH, Yang W
Current Applied Physics, 19(4), 498, 2019 |
| 2 |
홀측정을 이용한 ZTO 반도체 박막계면에서의 터널링 효과
오데레사
Korean Journal of Materials Research, 29(7), 408, 2019 |
| 3 |
Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array
Jia BW, Tan KH, Loke WK, Wicaksono S, Yoon SF
Applied Surface Science, 427, 876, 2018 |
| 4 |
Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films
Oh SH, Ferblantier G, Park YS, Schmerber G, Dinia A, Slaoui A, Jo W
Applied Surface Science, 441, 49, 2018 |
| 5 |
Growth and characterization of InSb on (100) Si for mid-infrared application
Jia BW, Tan KH, Loke WK, Wicaksono S, Yoon SF
Applied Surface Science, 440, 939, 2018 |
| 6 |
Excimer laser annealing: An alternative route and its optimisation to effectively activate Si dopants in AlN films grown by plasma assisted molecular beam epitaxy
Ghosh K, Busi P, Das S, Rathore JS, Laha A
Materials Research Bulletin, 97, 300, 2018 |
| 7 |
Effects of DC sputtering power and rapid thermal processing temperature on tungsten disulfide (WS2) thin films
Ma SM, Moon J, Kwon SJ, Cho ES
Molecular Crystals and Liquid Crystals, 676(1), 105, 2018 |
| 8 |
NTO/Ag/NTO multilayer transparent conducting electrodes for photovoltaic applications tuned by low energy ion implantation
Singh S, Sharma V, Asokan K, Sachdev K
Solar Energy, 173, 651, 2018 |
| 9 |
Transport properties of n- and p-type polycrystalline BaSi2
Deng T, Suemasu T, Shohonov DA, Samusevich IS, Filonov AB, Migas DB, Borisenko VE
Thin Solid Films, 661, 7, 2018 |
| 10 |
Halide vapor phase epitaxy of Si doped beta-Ga2O3 and its electrical properties
Goto K, Konishi K, Murakami H, Kumagai Y, Monemar B, Higashiwaki M, Kuramata A, Yamakoshi S
Thin Solid Films, 666, 182, 2018 |
