화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission
Zhao M, Karim A, Hansson GV, Ni WX, Townsend P, Lynch SA, Paul DJ
Thin Solid Films, 517(1), 34, 2008
2 Atomic structure of the carbon induced Si(001)-c(4 X 4) surface
He JP, Hansson GV, Uhrberg RIG
Applied Surface Science, 252(15), 5284, 2006
3 Hydrogen-induced metallization on Ge(111) xic(2 X 8)
Razado IC, Zhang HM, Hansson GV, Uhrberg RIG
Applied Surface Science, 252(15), 5300, 2006
4 Study of contact formation by high temperature deposition of Ni on SiC
Robbie K, Jemander ST, Lin N, Hallin C, Erlandsson R, Hansson GV, Madsen LD
Materials Science Forum, 338-3, 981, 2000
5 Light emitting SiGe/i-Si/Si : Er : O tunneling diodes prepared by molecular beam epitaxy
Ni WX, Du CX, Duteil F, Pozina G, Hansson GV
Thin Solid Films, 369(1-2), 414, 2000
6 Characterization of strained Si/Si1-yCy structures prepared by molecular beam epitaxy
Joelsson KB, Ni WX, Pozina G, Pettersson LAA, Hallberg T, Monemar B, Hansson GV
Journal of Vacuum Science & Technology B, 16(3), 1621, 1998
7 Properties of Er-related emission in in situ doped Si epilayers grown by molecular beam epitaxy
Buyanova IA, Chen WM, Pozina G, Ni WX, Hansson GV, Monemar B
Journal of Vacuum Science & Technology B, 16(3), 1732, 1998
8 On the improvement in thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy
Chen WM, Buyanova IA, Pozina G, Monemar B, Ni WX, Hansson GV
Journal of Vacuum Science & Technology B, 16(4), 1928, 1998
9 Optimization of growth conditions for strained Si/Si1-yCy structures
Joelsson KB, Ni WX, Pozina G, Hultman L, Hansson GV
Thin Solid Films, 321(1-2), 15, 1998
10 Role of strain in dopant surface segregation during Si and SiGe growth by molecular beam epitaxy
Ni WX, Hansson GV, Cardenas J, Svensson BG
Thin Solid Films, 321(1-2), 131, 1998