검색결과 : 15건
No. | Article |
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1 |
Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission Zhao M, Karim A, Hansson GV, Ni WX, Townsend P, Lynch SA, Paul DJ Thin Solid Films, 517(1), 34, 2008 |
2 |
Atomic structure of the carbon induced Si(001)-c(4 X 4) surface He JP, Hansson GV, Uhrberg RIG Applied Surface Science, 252(15), 5284, 2006 |
3 |
Hydrogen-induced metallization on Ge(111) xic(2 X 8) Razado IC, Zhang HM, Hansson GV, Uhrberg RIG Applied Surface Science, 252(15), 5300, 2006 |
4 |
Study of contact formation by high temperature deposition of Ni on SiC Robbie K, Jemander ST, Lin N, Hallin C, Erlandsson R, Hansson GV, Madsen LD Materials Science Forum, 338-3, 981, 2000 |
5 |
Light emitting SiGe/i-Si/Si : Er : O tunneling diodes prepared by molecular beam epitaxy Ni WX, Du CX, Duteil F, Pozina G, Hansson GV Thin Solid Films, 369(1-2), 414, 2000 |
6 |
Characterization of strained Si/Si1-yCy structures prepared by molecular beam epitaxy Joelsson KB, Ni WX, Pozina G, Pettersson LAA, Hallberg T, Monemar B, Hansson GV Journal of Vacuum Science & Technology B, 16(3), 1621, 1998 |
7 |
Properties of Er-related emission in in situ doped Si epilayers grown by molecular beam epitaxy Buyanova IA, Chen WM, Pozina G, Ni WX, Hansson GV, Monemar B Journal of Vacuum Science & Technology B, 16(3), 1732, 1998 |
8 |
On the improvement in thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy Chen WM, Buyanova IA, Pozina G, Monemar B, Ni WX, Hansson GV Journal of Vacuum Science & Technology B, 16(4), 1928, 1998 |
9 |
Optimization of growth conditions for strained Si/Si1-yCy structures Joelsson KB, Ni WX, Pozina G, Hultman L, Hansson GV Thin Solid Films, 321(1-2), 15, 1998 |
10 |
Role of strain in dopant surface segregation during Si and SiGe growth by molecular beam epitaxy Ni WX, Hansson GV, Cardenas J, Svensson BG Thin Solid Films, 321(1-2), 131, 1998 |