검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
28 nm FDSOI analog and RF Figures of Merit at N-2 cryogenic temperatures Esfeh BK, Planes N, Haond M, Raskin JP, Flandre D, Kilchytska V Solid-State Electronics, 159, 77, 2019 |
| 2 |
Reliable gate stack and substrate parameter extraction based on C-V measurements for 14 nm node FDSOI technology Mohamad B, Leroux C, Rideau D, Haond M, Reimbold G, Ghibaudo G Solid-State Electronics, 128, 10, 2017 |
| 3 |
An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models Pereira ASN, de Steel G, Planes N, Haond M, Giacomini R, Flandre D, Kilchytska V Solid-State Electronics, 128, 67, 2017 |
| 4 |
Characterization and modelling of layout effects in SiGe channel pMOSFETs from 14 nm UTBB FDSOI technology Berthelon R, Andrieu F, Ortolland S, Nicolas R, Poiroux T, Baylac E, Dutartre D, Josse E, Claverie A, Haond M Solid-State Electronics, 128, 72, 2017 |
| 5 |
Comparison of self-heating and its effect on analogue performance in 28 nm bulk and FDSOI Makovejev S, Planes N, Haond M, Flandre D, Raskin JP, Kilchytska V Solid-State Electronics, 115, 219, 2016 |
| 6 |
Assessment of 28 nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements Esfeh BK, Kilchytska V, Barral V, Planes N, Haond M, Flandre D, Raskin JP Solid-State Electronics, 117, 130, 2016 |
| 7 |
Wide frequency band assessment of 28 nm FDSOI technology platform for analogue and RF applications Makovejev S, Esfeh BK, Barral V, Planes N, Haond M, Flandre D, Raskin JP, Kilchytska V Solid-State Electronics, 108, 47, 2015 |
| 8 |
The Adequat Project for Development and Transfer of 0.25 Mu-M Logic Complementary Metal-Oxide-Semiconductor Modules Dekeersmaecker R, Declerck G, Felix P, Haond M, Hill C, Janssen G, Lorenz J, Maes H, Montree A, Neppl F, Patruno P, Rudan M, Ryssel H, Vandenhove L, Vandervorst W, Vanommen A Journal of Vacuum Science & Technology B, 12(4), 2852, 1994 |