검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
On the optimization and design of SiGeHBT cascode low-noise amplifiers Liang QQ, Niu GF, Cressler JD, Taylor S, Harame DL Solid-State Electronics, 49(3), 329, 2005 |
| 2 |
The revolution in SiGe: impact on device electronics Harame DL, Koester SJ, Freeman G, Cottrel P, Rim K, Dehlinger G, Ahlgren D, Dunn JS, Greenberg D, Joseph A, Anderson F, Rieh JS, Onge SAST, Coolbaugh D, Ramachandran V, Cressler JD, Subbanna S Applied Surface Science, 224(1-4), 9, 2004 |
| 3 |
The effects of operating bias conditions on the proton tolerance of SiGeHBTs Zhang SM, Cressler JD, Niu GF, Marshall CJ, Marshall PW, Kim HS, Reed RA, Palmer MJ, Joseph AJ, Harame DL Solid-State Electronics, 47(10), 1729, 2003 |
| 4 |
Device design and circuit modeling issues in ultrahigh vacuum chemical vapor deposition SiGe heterojunction bipolar transistors Cressler JD, Joseph AJ, Salmon SL, Harame DL Journal of Vacuum Science & Technology B, 16(3), 1516, 1998 |